Product Summary
The MB8264A-12 is a fully decoded, dynamic random access memory organized as 65536 one-bit words. The design is optimized for high-speed, high performance applications such as mainframe memory, buffer memory, peripheral storage and environments where low power dissipation and compact layout is requipred.
Parametrics
MB8264A-12 absolute maximum ratings: (1)voltage on any pin relative to VSS, VIN, VOUT: -1 to 7V; (2)votlage on VCC supply relative to VSS, VCC: -1 to 7V; (3)storage temperature, Tstg: -55 to 150℃; (4)power dissipation, PD: 1.0W; (5)short circuit output current: 50mA.
Features
MB8264A-12 features: (1)silicon-gate, double poly NMOS, single transistor cell; (2)low power 248mW max; (3)RAS-only and hidden refresh capability; (4)read-modify-write and page-mode cpability; (5)common I/O capability using early write operation; (6)output unlatched at cycle end allows extended page boundary and two-dimensional chip select; (7)on-chip latches for addresses and data-in.
Diagrams
MB82 |
RECTIFIER BRIDGE 8A 200V BR-6 |
Data Sheet |
Negotiable |
|
||||||||
MB820 |
ACCY MOUNT BMM 3/4 58A |
Data Sheet |
|
|
||||||||
MB82-B |
Micro Commercial Components (MCC) |
Bridge Rectifiers 200V 8A |
Data Sheet |
Negotiable |
|
|||||||
MB822 |
ACCY MOUNT BMM 3/4 58A |
Data Sheet |
|
|
||||||||
MB823 |
ACCY MOUNT BMM 3/4 58A |
Data Sheet |
|
|
||||||||
MB825 |
ACCY MOUNT BMM 3/4 58A |
Data Sheet |
|
|