Product Summary

The IRF740B is an N-Channel enhancement mode power field effect transistor. It is produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The IRF740B is well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

Parametrics

IRF740B absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 400 V; (2)ID, Drain Current - Continuous (TC = 25℃): 10 A; (3)- Continuous (TC = 100℃): 6.3 A; (4)IDM, Drain Current - Pulsed: 40 A; (5)VGSS, Gate-Source Voltage: ± 30 V; (6)EAS, Single Pulsed Avalanche Energy: 450 mJ; (7)IAR, Avalanche Current: 10 A; (8)EAR, Repetitive Avalanche Energy: 13.4 mJ; (9)dv/dt, Peak Diode Recovery dv/dt: 5.5 V/ns; (10)PD, Power Dissipation (TC = 25℃): 134 W; (11)- Derate above 25℃: 0.35 W/℃; (12)TJ, TSTG, Operating and Storage Temperature Range: -55 to +150℃; (13)TL, Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300℃.

Features

IRF740B features: (1)10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V; (2)Low gate charge ( typical 41 nC); (3)Low Crss ( typical 35 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

IRF740B block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF740B
IRF740B

Fairchild Semiconductor

MOSFET 400V N-Channel B-FET

Data Sheet

Negotiable 
IRF740B_Q
IRF740B_Q

Fairchild Semiconductor

MOSFET

Data Sheet

Negotiable 
IRF740BPBF
IRF740BPBF

Vishay

MOSFET N-Ch 400V 10A

Data Sheet

0-560: $0.54
560-1000: $0.48
1000-2000: $0.47
2000-5000: $0.45