Product Summary
The IRFBC40PBF is a Power MOSFET. It provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package of the IRFBC40PBF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parametrics
IRFBC40PBF absolute maximum ratings: (1)Drain-Source Voltage VDS: 600 V; (2)Gate-Source Voltage VGS: ±20 V; (3)Continuous Drain Current VGS at 10 V ID: 6.2 A at TC = 25 ℃, 3.9 A at TC = 100 ℃ ; (4)Pulsed Drain Current IDM: 25 A; (5)Linear Derating Factor: 1.0 W/℃; (6)Single Pulse Avalanche Energy EAS: 570 mJ; (7)Repetitive Avalanche Currenta IAR: 6.2 A; (8)Repetitive Avalanche Energya EAR: 13 mJ; (9)Maximum Power Dissipation TC = 25 ℃ PD: 125 W; (10)Peak Diode Recovery dV/dt: 3.0 V/ns; (11)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to + 150 ℃.
Features
IRFBC40PBF features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)Fast Switching; (4)Ease of Paralleling; (5)Simple Drive Requirements; (6)Lead (Pb)-free Available.
Diagrams
<IMG border=0 alt="IRFBC40PBF diagram" src="http://www.seekic.com/uploadfile/ic-mfg/2012710221331439.jpg">
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![]() MOSFET N-Chan 600V 6.2 Amp |
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![]() IRFB11N50A |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 11 Amp |
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![]() IRFB11N50APBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 11 Amp |
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![]() IRFB13N50A |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 14 Amp |
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![]() IRFB13N50APBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 14 Amp |
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![]() IRFB16N50K |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 17 Amp |
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![]() Negotiable |
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![]() IRFB16N50KPBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 17 Amp |
![]() Data Sheet |
![]() Negotiable |
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