(China (Mainland))
Product Summary
The NTMS4801NR2 is a Power MOSFET suitable for DC-DC Converters, Synchronous MOSFET and Printers.
Parametrics
NTMS4801NR2 absolute maximum ratings: (1)Drain-to-Source Voltage, VDSS: 30 V; (2)Gate-to-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current, ID: 10 A; (4)Power Dissipation, PD: 1.52 W; (5)Pulsed Drain Current, IDM: 35 A; (6)Operating Junction and Storage Temperature TJ, Tstg: -55 to 150℃; (7)Source Current (Body Diode), IS: 3.0 A; (8)Single Pulse Drain-to-Source Avalanche Energy, EAS: 98 mJ; (9)Lead Temperature for Soldering Purposes, TL: 260℃.
Features
NTMS4801NR2 features: (1)Low RDS(on) to Minimize Conduction Losses; (2)Low Capacitance to Minimize Driver Losses; (3)Optimized Gate Charge to Minimize Switching Losses; (4)This is a Pb?Free Device.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 NTMS4801NR2G |
ON Semiconductor |
MOSFET NFET SO8 30V 9.9A 12.5mOhm |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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ON Semiconductor |
MOSFET 20V 10A P-Channel |
Data Sheet |
Negotiable |
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NTMS10P02R2G |
ON Semiconductor |
MOSFET 20V 10A P-Channel |
Data Sheet |
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NTMS3P03R2 |
ON Semiconductor |
MOSFET 30V 3.05A P-Channel |
Data Sheet |
Negotiable |
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NTMS3P03R2G |
ON Semiconductor |
MOSFET 30V 3.05A P-Channel |
Data Sheet |
Negotiable |
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MOSFET P-CH 20V 6.9A 8-SOIC |
Data Sheet |
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NTMS4107N |
Other |
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Data Sheet |
Negotiable |
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